TEMPERATURE SENSOR, METHOD OF MANUFACTURING THE TEMPERATURE SENSOR, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD OF CONTROLLING THE SEMICONDUCTOR DEVICE

摘要

A disclosed temperature sensor includes a charge trap structure including a silicon oxide film formed on a substrate; an aluminum oxide film that is formed on the silicon oxide film, wherein oxygen is injected into the aluminum oxide film from an upper surface thereof; and an electrode formed on the aluminum oxide film, wherein a flat band voltage of the charge trap structure is temperature dependent.