MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device by imparting stable electric characteristics to a transistor including an oxide semiconductor film in a channel.

SOLUTION: An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed by lamination. Through heat treatment performed subsequently, crystal growth proceeds into the oxide semiconductor film having the first crystal structure using the oxide semiconductor film having the second crystal structure as a seed. The oxide semiconductor film formed thus is used as an active layer of a transistor.

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