| 发明名称 |
SILICON CONTROLLED RECTIFIERS (SCR), METHODS OF MANUFACTURE AND DESIGN STRUCTURES |
| 摘要 |
Silicon controlled rectifiers (SCR), methods of manufacture and design structures are disclosed herein. The method includes forming a common P-well on a buried insulator layer of a silicon on insulator (SOI) wafer. The method further includes forming a plurality of silicon controlled rectifiers (SCR) in the P-well such that N+ diffusion cathodes of each of the plurality of SCRs are coupled together by the common P-well.
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| 申请公布号 |
US2012178222(A1) |
申请公布日期 |
2012.07.12 |
| 申请号 |
US20110985840 |
申请日期 |
2011.01.06 |
| 申请人 |
ABOU-KHALIL MICHEL J.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;LI JUNJUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABOU-KHALIL MICHEL J.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;LI JUNJUN |
| 分类号 |
H01L21/33;G06F17/50 |
主分类号 |
H01L21/33 |
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