发明名称 |
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. |
申请公布号 |
US2012178268(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201213423783 |
申请日期 |
2012.03.19 |
申请人 |
KOHNO MASAYUKI;NISHITA TATSUO;NAKANISHI TOSHIO;TOKYO ELECTRON LIMITED |
发明人 |
KOHNO MASAYUKI;NISHITA TATSUO;NAKANISHI TOSHIO |
分类号 |
H01L21/318 |
主分类号 |
H01L21/318 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|