发明名称 |
Method and Layer Structure for Preventing Intermixing of Semiconductor Layers |
摘要 |
A semiconductor device includes an etch-stop layer between a first layer of a field-effect transistor and a second layer of a bipolar transistor, each of which includes at least one arsenic-based semiconductor layer. A p-type layer is between the second layer and the etch-stop layer, and the device can include an n-type layer deposited between the etch-stop layer and p-type layer. The p-type layer provides an electric field that inhibits intermixing of the InGaP layer with layers in the first and second layers. |
申请公布号 |
US2012175681(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201113231163 |
申请日期 |
2011.09.13 |
申请人 |
STEVENS KEVIN S.;REHDER ERIC M.;LUTZ CHARLES R.;KOPIN CORPORATION |
发明人 |
STEVENS KEVIN S.;REHDER ERIC M.;LUTZ CHARLES R. |
分类号 |
H01L27/102;H01L21/8222 |
主分类号 |
H01L27/102 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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