| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of an inter-element separation layer capable of improving controllability in a polishing step of an insulating film formed on a semiconductor substrate and capable of forming the inter-element separation layer having excellent inter-element separation performance. <P>SOLUTION: A formation method of an inter-element separation layer comprises: a step of sequentially forming a pad oxide film and a nitride film on a surface of a semiconductor substrate; a step of forming a trench which reaches an inside of the semiconductor substrate through the pad oxide film and the nitride film; a step of forming an embedded oxide film so as to fill the trench and cover the nitride film; a step of polishing the embedded oxide film using a first polishing agent so that the embedded oxide film remains on the nitride film; and a step of polishing the embedded oxide film using a second polishing agent having a larger polishing selectivity than a polishing selectivity of the embedded oxide film with respect to a nitride film of the first polishing agent, exposing the nitride film, and planarizing exposed surfaces of the nitride film and the embedded oxide film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
