发明名称 TRANSISTOR INCLUDING REDUCED CHANNEL LENGTH
摘要 A transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer.
申请公布号 US2012175684(A1) 申请公布日期 2012.07.12
申请号 US20110986197 申请日期 2011.01.07
申请人 TUTT LEE W.;NELSON SHELBY F. 发明人 TUTT LEE W.;NELSON SHELBY F.
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
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