P-I-N-TYPE MULTIJUNCTION PHOTOVOLTAIC MATERIAL, PHOTOVOLTAIC CERAMIC DEVICE COMPRISING SAID MATERIAL AND METHODS FOR THE PRODUCTION OF THE MATERIAL AND DEVICE

摘要

The invention relates to a P-I-N-type photovoltaic material characterised in that it comprises at least three P-I-N semiconductor junctions stacked in tandem, the P, I and N layers of which comprise hydrogenated monocrystalline silicon contained in an amorphous silicon matrix. Moreover, each of the P and N layers of each P-I-N junction has a specific composition. Said material can be used to produce photovoltaic devices with a ceramic base, preferably traditional materials used in the construction industry. The invention also relates to the method for obtaining the aforementioned photovoltaic material, as well as to the method for conditioning the surface of the ceramic base and the enamel used for said conditioning, which has a novel and inventive composition.