NON-VOLATILE MEMORY DEVICE OF PERFORMING PARTIAL-ERASE OPERATION, MEMTHOD THEREOF, AND APPARATUSES HAVING THE SAME

摘要

PURPOSE: A nonvolatile memory device, an operating method thereof, and apparatuses including the same are provided to remove the influence of a pass voltage disturbance on a plurality of erase cells connected to an upper word line which is not selected. CONSTITUTION: An address, page data, and a program command are received(S10,S20). The page data is programmed in a page defined by a word line corresponding to an address among a plurality of word lines connected to a NAND memory cell string(S30). A sub block defined from the following word line to the final word line is erased(S50).