| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit leakage caused by migration of Ag. <P>SOLUTION: A semiconductor device comprises: a substrate; a eutectic layer formed on the substrate; insulation layers formed above the eutectic layer; a plurality of semiconductor light-emitting elements each having a semiconductor laminate including: an adhesion layer, an Ag reflection film formed on the adhesion layer, a transparent electrode formed on the Ag reflection film, a first conductivity type first nitride semiconductor layer formed on the transparent electrode, a second nitride semiconductor layer formed on the first nitride semiconductor layer and emitting light when current flows, and a second conductivity type third nitride semiconductor layer formed on the second nitride semiconductor layer, each being formed on the insulation layer; and wiring electrodes formed above the adhesion layer and the Ag reflection film for connecting the first conductivity type first nitride semiconductor layer of one between the neighboring semiconductor light-emitting elements with the second conductivity type third nitride semiconductor layer of the other, with the undermost layer being composed of the same material as that of the adhesion layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
