| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stacked structure of a nitride semiconductor capable of reducing the amount of warpage and to provide a method of manufacturing the same. <P>SOLUTION: A stacked structure of a nitride semiconductor comprises a substrate having projections on its primary surface, a single-crystal layer that is directly provided on the primary surface of the substrate and covers the projections, and a nitride semiconductor layer provided on the single-crystal layer. The substrate does not contain a nitride semiconductor. The single-crystal layer includes cracks. <P>COPYRIGHT: (C)2012,JPO&INPIT |
