| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrically rewritable semiconductor nonvolatile memory device that suppresses the degradation of a tunnel insulating film without increasing an occupation area and has high reliability. <P>SOLUTION: A field relaxation layer made of an insulating film of a material different from that of a tunnel insulating film is disposed on a tunnel insulating film near an edge of a tunnel region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
