| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer that does not cause any problem when further size miniaturization is performed. <P>SOLUTION: A single crystal semiconductor wafer has a region where defects are reduced. The region where the defects are reduced has density of GOI related defects in a range of 0-0.1 piece/cm<SP POS="POST">2</SP>. As a whole, the region accounts for unit area ratio of 10-100% of a planar flat surface of the semiconductor wafer. In that case, a remaining region of the semiconductor wafer has a clearly higher defect density than the region where the defects are reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
