| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can improve reliability without increasing the area of a column redundancy circuit. <P>SOLUTION: The semiconductor storage device includes: bit lines connected to a memory cell; a sense amplifier connected to the plurality of the bit lines; an identification section for holding failure information of the bit line; and a control section for controlling the potential of a second bit line adjacent to a selected first bit line so that the potential becomes the same potential when programming and verifying when the second bit line is determined to be failure based on the failure information of the bit line, when data are written. <P>COPYRIGHT: (C)2012,JPO&INPIT |
