发明名称 |
Multiple Vt Field-Effect Transistor Devices |
摘要 |
Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a drain region; at least one channel interconnecting the source and drain regions; and a gate, surrounding at least a portion of the channel, configured to have multiple threshold voltages due to the selective placement of at least one band edge metal throughout the gate.
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申请公布号 |
US2012175712(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201213346165 |
申请日期 |
2012.01.09 |
申请人 |
CHANG JOSEPHINE B.;CHANG LELAND;MO RENEE T.;NARAYANAN VIJAY;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE B.;CHANG LELAND;MO RENEE T.;NARAYANAN VIJAY;SLEIGHT JEFFREY W. |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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