Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
申请公布号
WO2012093360(A1)
申请公布日期
2012.07.12
申请号
WO2012IB50036
申请日期
2012.01.04
申请人
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL);KIS, ANDRAS;RADISAVLJEVIC, BRANIMIR