| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device capable of stably forming a metal contact. <P>SOLUTION: A method for fabricating a semiconductor device comprises: a step of forming a storage node contact plug 12 over a cell region; a step of forming a first inter-layer dielectric layer 17; a step of forming a first bit line 20 over the first inter-layer dielectric layer in a peripheral region; a step of forming a second inter-layer dielectric layer 22; a step of forming a second bit line 25 electrically connected to the first bit ine over the second inter-layer dielectric layer in the peripheral region; a step of exposing an upper surface of the storage node contact plug in the cell region; a step of forming a capacitor contacting the storage node contact plug over the cell region; a step of forming a third inter-layer dielectric layer 31 over an entire surface of the substrate having the capacitor formed thereon; and a step of forming a metal contact 33 contacting with the second bit line through the third inter-layer dielectric layer in the peripheral region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
