| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element suitable for making a high-quality semiconductor layer grow above a columnar quantum dot, and a manufacturing method of such semiconductor element. <P>SOLUTION: A semiconductor element comprises a semiconductor substrate and a columnar quantum dot formed above the semiconductor substrate. The columnar quantum dot includes a structure in which a first part formed of a first quantum dot and a first spacer layer having a tensile strain amount with respect to the semiconductor substrate and laminated on the first quantum dot, and a second part formed of a second quantum dot and a second spacer layer having a tensile strain amount larger than that of the first spacer layer with respect to the semiconductor substrate and laminated on the second quantum dot are alternately disposed in a thickness direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
