| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high performance nitride semiconductor light-emitting element having a high power-light conversion efficiency obtained by efficiently improving optical confinement and by inhibiting non-radiative recombination and current leakage. <P>SOLUTION: A nitride semiconductor light-emitting element 100 comprises an n-type semiconductor layer such as an n-type buffer layer 121 and an n-type clad layer 122, and a p-type semiconductor layer such as a light-emitting layer 124 and a p-type clad layer 126. The nitride semiconductor light-emitting element 100 comprises a ridge structure including side faces of the light-emitting layer 124 as ridge side faces. The side faces of the light-emitting layer 124 are covered with a passivation film 140 composed of Al<SB POS="POST">x</SB>Ga<SB POS="POST">y</SB>In<SB POS="POST">1-x-y</SB>N (where 0≤x,y≤1, 0≤x+y≤1) having resistance higher than that of the light-emitting layer 124. The passivation film 140 is covered with a low refractive index film 151 having a refractive index lower than a refractive index of the light-emitting layer 124. <P>COPYRIGHT: (C)2012,JPO&INPIT |
