发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of improving current detection accuracy without increasing a chip area. <P>SOLUTION: A semiconductor element 1 has an emitter electrode 7. Lead wire 10 is electrically connected to the emitter electrode 7, passes above the emitter electrode 7 and is led out to a side. A current sensor 11 has a magnetoresistive element 12 and detects current flowing through the lead wire 10. The magnetoresistive element 12 is arranged on the emitter electrode 7 and below the lead wire 10. A resistance value of the magnetoresistive element 12 linearly changes relative to a magnetic field generated by the current. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012132832(A) 申请公布日期 2012.07.12
申请号 JP20100286342 申请日期 2010.12.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 AKIYAMA HAJIME;OKADA AKIRA
分类号 G01R15/20;G01R33/09;H01L27/04;H01L29/06;H01L29/739;H01L29/78;H01L43/08 主分类号 G01R15/20
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