发明名称 SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM USING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent formation of a cavity between capacitive blocks when the capacitive blocks, each including a plurality of crown bottom electrodes constituting a compensation capacitive element, are connected in series by an upper electrode. <P>SOLUTION: Two neighboring capacitive blocks (first block and second block) respectively formed on different common pad electrodes (22c, 22d) are electrically connected in series by an upper electrode 36c. A distance D1 between two neighboring capacitive blocks connected in series by the upper electrode 36c is set at a distance between lower electrodes facing each other on the outermost peripheries of the respective capacitive blocks and not more than two times larger than a film thickness of the upper electrode film embedded between two blocks. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012134238(A) 申请公布日期 2012.07.12
申请号 JP20100283353 申请日期 2010.12.20
申请人 ELPIDA MEMORY INC 发明人 HASUNUMA EIJI
分类号 H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址