MANUFACTURING METHOD FOR SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an SOI wafer with a desired SOI layer thickness by performing epitaxial growth without causing step in a ravine form on an SOI wafer with no silicon oxide film in a terrace manufactured by an ion implantation separation method.

SOLUTION: A manufacturing method for an SOI wafer comprises: removing a periphery part of an implantation oxide film so that an outer peripheral end of an SOI layer of an SOI wafer is located outside an outer peripheral end of the implantation oxide film; heating the SOI wafer in a reductive atmosphere including hydrogen or an atmosphere including hydrogen chloride gas; and forming an epitaxial layer on a surface of the SOI layer.

COPYRIGHT: (C)2012,JPO&INPIT