发明名称 Process for the manufacture of wafers for solar cells at ambient pressure
摘要 Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.
申请公布号 US2012178262(A1) 申请公布日期 2012.07.12
申请号 US201013496498 申请日期 2010.09.15
申请人 RIVA MARCELLO;LOPEZ ALONSO ELENA;LINASCHKE DORIT;DANI INES;KASKEL STEFAN;SOLVAY FLUOR GMBH 发明人 RIVA MARCELLO;LOPEZ ALONSO ELENA;LINASCHKE DORIT;DANI INES;KASKEL STEFAN
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址