发明名称 SEMICONDUCTOR DEVICE
摘要 When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.
申请公布号 US2012176559(A1) 申请公布日期 2012.07.12
申请号 US201213421933 申请日期 2012.03.16
申请人 FUJIKAWA SAISHI;HOSOYA KUNIO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJIKAWA SAISHI;HOSOYA KUNIO
分类号 G02F1/136;H01L33/08 主分类号 G02F1/136
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