| 摘要 |
<P>PROBLEM TO BE SOLVED: To control an in-plane processing characteristic of a substrate by controlling a temperature of a focus ring independently of that of the substrate. <P>SOLUTION: A substrate processing apparatus includes: a loading stand 110 having a susceptor 114 including a substrate loading face 115 on which a wafer W is placed and a focus ring loading face 116 on which a focus ring is placed; an electrostatic chuck 120 which electrostatically attracts a wafer rear face on the substrate loading face and electrostatically attracts a focus ring rear face on the focus ring loading face; and a heat transfer gas supply mechanism 200. In the heat transfer gas supply mechanism, a first heat transfer gas supply section 210 supplying first heat transfer gas to a substrate rear face and a second heat transfer gas supply section 220 supplying second heat transfer gas to the focus ring rear face are independently installed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
