发明名称 |
METHOD FOR MAKING EPITAXIAL STRUCTURE |
摘要 |
A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed. |
申请公布号 |
US2012178248(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201113276294 |
申请日期 |
2011.10.18 |
申请人 |
WEI YANG;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY |
发明人 |
WEI YANG;FAN SHOU-SHAN |
分类号 |
H01L21/20;B82Y40/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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