发明名称 METHOD FOR MAKING EPITAXIAL STRUCTURE
摘要 A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed.
申请公布号 US2012178248(A1) 申请公布日期 2012.07.12
申请号 US201113276294 申请日期 2011.10.18
申请人 WEI YANG;FAN SHOU-SHAN;HON HAI PRECISION INDUSTRY CO., LTD.;TSINGHUA UNIVERSITY 发明人 WEI YANG;FAN SHOU-SHAN
分类号 H01L21/20;B82Y40/00 主分类号 H01L21/20
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