| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress abnormal growth of a gallium nitride crystal in circumferential parts of both ends of a seed substrate in manufacture of a gallium nitride self-supporting substrate in a vapor phase growth method. <P>SOLUTION: A release layer is formed on the seed substrate 14; the seed substrate is disposed in a susceptor 11; a gallium nitride self-supporting substrate 22 is vapor-phase grown while a raw material gas to form the gallium nitride crystal is supplied to the susceptor 11, and abnormal growth of the gallium nitride crystal in circumferential parts of both ends of the seed substrate is suppressed in the seed substrate in the susceptor; and the susceptor 11 has a pocket portion 12 to fix the seed substrate 14 and a subsusceptor 13 not reacting with the seed substrate 14 between the susceptor 11 and the seed substrate 14, and a gap between the seed substrate 14 and the subsusceptor 13, and abnormal growth of the gallium nitride crystal in circumferential parts of both ends of the seed substrate is suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
