| 发明名称 |
WAFER PRETREATMENT FOR COPPER ELECTROPLATING |
| 摘要 |
The present invention is directed to a pretreatment process for copper electroplating of via or trench features on a wafer, comprising filling the via or trench feature with a pretreatment solution, wherein the pretreatment solution comprises copper ions. |
| 申请公布号 |
US2012175264(A1) |
申请公布日期 |
2012.07.12 |
| 申请号 |
US201013496251 |
申请日期 |
2010.09.22 |
| 申请人 |
LAI CHIEN-HSUN;YANG SHAO-MIN;HUANG TZU-TSANG;BASF SE |
发明人 |
LAI CHIEN-HSUN;YANG SHAO-MIN;HUANG TZU-TSANG |
| 分类号 |
C25D5/02;C25D3/38 |
主分类号 |
C25D5/02 |
| 代理机构 |
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代理人 |
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