A METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor light emitting device is provided to decrease a dislocation defect by including a nitride buffer layer of a porous structure. CONSTITUTION: A first nitride layer(210) is grown on a substrate. The upper side of a nitride layer is etched by chloride series gas. A plurality of the first air gaps(213) are formed by growing a second nitride layer(220) on the top of the first nitride layer. The upper side of the second nitride layer is etched by the provided etching gas. A plurality of the second air gaps(223) are formed by growing a third nitride layer on the top of the second nitride layer.