| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve drain current characteristics in a diamond FET. <P>SOLUTION: A high-concentration boron-doped diamond thin-film layer 102 is grown on a diamond crystal layer 1(Fig. 1(a)). Next, Ti layers 131A and 131B and Au layers 132A and 132B are sequentially vapor-deposited as a source electrode and a drain electrode, respectively (Fig. 1(b)). Next, annealing is performed at a temperature of 400°C to react Ti with diamond and form TiC layers 133A and 133B (Fig. 1(c)). Finally, an Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>film 141 is formed in a gate part, and an Al gate electrode 142 is vapor-deposited on the Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>film 141 (Fig. 1(d)). Drain current characteristics of the produced diamond FET has the maximum drain current density of 600 mA/mm at a gate voltage of -3 V, which is about six times as that in the case of the conventional art. Although, with respect to the temperature dependency, the drain current density is rapidly reduced in the vicinity of a range from the room temperature to 150°C in the conventional art, the present invention operates with stability to a temperature of 900°C. <P>COPYRIGHT: (C)2012,JPO&INPIT |
