| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining high breakdown voltage and high reliability by relaxing electric field concentration, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises a semiconductor substrate, a gate electrode provided on the semiconductor substrate, a source electrode and a drain electrode provided on the substrate so as to sandwich the gate electrode, and a recess provided under the edge of the gate electrode at least at the drain electrode side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
