| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method with less variation in sheet resistance, which can shorten a period of a manufacturing process. <P>SOLUTION: In a semiconductor device manufacturing method of forming a resistance element by injecting an impurity ion into a semiconductor region on which semiconductor layers are layered, when a second semiconductor layer 5 is layered on a first semiconductor layer 4 and the resistance element composed of the first semiconductor layer is formed, an amount of the impurity ion reaching into the first semiconductor layer is controlled by changing a thickness of the second semiconductor layer. As a result, the resistance element having preset sheet resistance is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
