TEMPLATE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING A VERTICAL TYPE NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present invention relates to a method of manufacturing a nitride semiconductor light-emitting device using a template. A method of manufacturing the template includes: a step of growing a first nitride layer on a substrate; a step of supplying chloride-based etch gas to etch a top surface of the first nitride layer; a step of growing a second nitride layer on the top surface of the first nitride layer to form a plurality of first pores, a step of supplying the etch gas to etch a top surface of the second nitride layer, and a step of growing a third nitride layer on the top surface of the second nitride layer to form a plurality of second pores.