NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride-based semiconductor light emitting device and method of manufacturing the same are provided to minimize a total reflection of light by varying a light route coming from an active layer through a p-type nitride layer and a growth preventing film. CONSTITUTION: A n-type nitride layer(130) and active layer(140) are grown on a substrate. A growth preventing film(150) is formed as a previously fixed pattern on the top of the active layer. A p-type nitride layer(160) is formed on the outside of the growth preventing file on the top of the active layer. The p-type nitride layer is formed thicker than the growth preventing film. A transparent electrode layer(170) is included on the top of the growth preventing film and the p-type nitride layer.