MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME METHOD

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce processing time by using a part of a buffer layer as a current blocking layer mounted under an electrode pad. CONSTITUTION: A buffer layer(20) is formed on a semiconductor growth substrate(10). A light emitting structure(30) is formed on the buffer layer. The light emitting structure includes a first conductive semiconductor layer(31), an active layer(32) and a second conductive semiconductor layer(33). The semiconductor growth substrate is removed. An electrode is formed on the buffer layer exposed by removing the semiconductor growth substrate.