发明名称 |
ANNEAL SYSTEM INCLUDING 2 WAY RADIO FREQUENCY PLASMA MODULE |
摘要 |
PURPOSE: An anneal system including two way radio frequency plasma module is provided to eliminate impurity of a thin film by reducing exposure time in the hot temperature while processing a wafer. CONSTITUTION: A furnace(10) includes a heater and two RF plasma antennas. A heater control unit(24) controls the operation of the heater. Bidirectional RF plasma modules(41,42,44,45a,45b) generate RF power. The bidirectional RF plasma module distributes generated RF power to each of the two RF plasma antennas. The two RF plasma antennas are installed on the facing direction of the furnace.
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申请公布号 |
KR20120079386(A) |
申请公布日期 |
2012.07.12 |
申请号 |
KR20110000635 |
申请日期 |
2011.01.04 |
申请人 |
HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION |
发明人 |
PARK, KYOUNG WOO;HAN, JAE HYUN |
分类号 |
H01L21/205;H01L21/3065;H05H1/46 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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