| 摘要 |
A method for the production of graphene comprises: forming a carbon containing layer 12 on a support substrate 10; forming a noble metal containing layer 14 onto the carbon containing layer; heating the carbon containing layer and noble metal containing layer over a predetermined time period to a temperature in the range of 350°C - 1000 °C; and cooling or allowing to cool the heated material during which time a graphene Iayer 18 will form on the surface of the heated material. The carbon containing material is preferably silicon carbide and the metal is preferably nickel. The carbon-containing and metal layers may be formed by sputtering and preferably have thicknesses of 30-90nm and 200nm respectively. |
