发明名称 |
THIN FILM, METHOD FOR FORMING SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM |
摘要 |
It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object. |
申请公布号 |
KR20120079140(A) |
申请公布日期 |
2012.07.11 |
申请号 |
KR20127011731 |
申请日期 |
2010.10.07 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY |
发明人 |
OHMI TADAHIRO;ASAHARA HIROKAZU;INOKUCHI ATSUTOSHI |
分类号 |
H01L21/365;C23C16/40;C23C16/511;H01L33/42 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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