Method for forming strained semiconductor channel and semiconductor device,申请号GB20110021729-传众专利搜索

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发明名称	Method for forming strained semiconductor channel and semiconductor device
摘要
申请公布号	GB2487113(A)	申请公布日期	2012.07.11
申请号	GB20110021729	申请日期	2010.09.19
申请人	INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES	发明人	HAIZHOU YIN;HUILONG ZHU;ZHIJIONG LUO
分类号	H01L29/78;H01L21/8234;H01L21/8238;H01L29/66	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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