| 摘要 |
The electric connection structure connects a first silicon body (10) to conductive regions (29, 30) provided on the surface of a second silicon body (1) arranged on the first body (10). The electric connection structure comprises at least one plug region (3) of silicon, which extends through the second body (1); at least one insulation region (2a, 6) laterally surrounding the plug region (3); and at least one conductive electromechanical connection region (23) arranged between the first body (10) and the second body (1), and in electrical contact with the plug region (3) and with conductive regions (15-19; 40) of the first body (10). To form the plug region (3), trenches (2a) are dug in a first wafer (1) and are filled, at least partially, with insulating material (6). Next, the plug region (3) is fixed to a metal region (23) provided on a second wafer (10), by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. Subsequently, the first wafer (1) is thinned until the trenches (2a) and electrical connections (29, 30) are formed on the free face of the first wafer. <IMAGE> |
