| 摘要 |
<P>PROBLEM TO BE SOLVED: To make junction strength enough high and to make also a resistance component at a junction interface enough low when manufacturing a GaN-based semiconductor light emitting element, by joining a conductive substrate with a laminate obtained by forming a GaN-based semiconductor on a substrate, and then eliminating the substrate on the side of the laminate. <P>SOLUTION: The GaN-based semiconductor light emitting element 1 equipped with layers each consisting of a GaN-based semiconductor comprises the laminate 10A and a second junction layer 33. The laminate 10A includes a GaN-based semiconductor layers 12 comprising an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, and all stacked in succession, and further includes a metal first junction layer 14 as the uppermost layer. The second junction layer 33 is formed on a conductive substrate 31 with a surface of an opposite side thereof to a side thereof where the conductive substrate 31 is formed, and consists of substantially the same material as that of the first junction layer 14 with crystal orientations in the direction perpendicular to the junction surface of the same as each other. <P>COPYRIGHT: (C)2007,JPO&INPIT |
