发明名称 Word line driving apparatus
摘要 A source potential of a pull-up transistor is increased after predetermined time from a rising timing of a word line selection command signal. To this end, a condenser is provided to couple the source potential and gate potential of the pull-up transistor. Preferably a gate potential control transistor that controls the gate potential of the pull-up transistor is a depletion type N-channel field effect transistor that maintains the gate potential at a low level.
申请公布号 US8218392(B2) 申请公布日期 2012.07.10
申请号 US20100847447 申请日期 2010.07.30
申请人 SASAKI TOSHIROU;LAPIS SEMICONDUCTOR CO., LTD. 发明人 SASAKI TOSHIROU
分类号 G11C8/08 主分类号 G11C8/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利