发明名称 Programming memory with sensing-based bit line compensation to reduce channel-to-floating gate coupling
摘要 During programming of storage elements, channel-to-floating gate coupling effects are compensated to avoid increased programming speed and threshold voltage distribution widening. In connection with a programming iteration, unselected bit lines voltages are stepped up to induce coupling to selected bit lines, and the amount of coupling which is experienced by the selected bit lines is sensed. When a program pulse is applied, voltages of the selected bit lines are set based on the amount of coupling. The bit line voltage is set higher when more coupling is sensed. The amount of coupling experience by a given selected bit line is a function of its proximity to unselected bit lines. One or more coupling thresholds can be used to indicate that a given selected bit line has one or two adjacent unselected bit lines, respectively.
申请公布号 US8218381(B2) 申请公布日期 2012.07.10
申请号 US20090624595 申请日期 2009.11.24
申请人 LI YAN;SANDISK TECHNOLOGIES INC. 发明人 LI YAN
分类号 G11C11/34 主分类号 G11C11/34
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