| 摘要 |
<p>A method of cleaning tantalum-containing deposits from a copper surface of a process chamber component involves immersing the surface of the component in a cleaning solution. The cleaning solution has HF and an oxidizing agent. The cleaning solution can have a molar ratio of HF to the oxidizing agent of at least about 6:1, and the oxidizing agent can include at least one of HNO3, H2O2, H2SO3 and O3. The cleaning solution removes the tantalum-containing deposits from the surface substantially without eroding the surface.</p> |
