发明名称 Power semiconductor device
摘要 Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit.
申请公布号 US8217487(B2) 申请公布日期 2012.07.10
申请号 US20100763689 申请日期 2010.04.20
申请人 CHOI YONGCHEOL;JEON CHANG-KI;KIM MINSUK;KIM DONGHWAN;FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 CHOI YONGCHEOL;JEON CHANG-KI;KIM MINSUK;KIM DONGHWAN
分类号 H02M3/07;H01L21/70 主分类号 H02M3/07
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