| 摘要 |
MOSFETs and methods of making MOSFETs are provided. According to one embodiment, a semiconductor device includes a substrate and a Metal-Oxide-Semiconductor (MOS) transistor that includes a semiconductor region formed on the substrate, a source region and drain region formed in the semiconductor region that are separated from each other, a channel region formed in the semiconductor region that separates the source region and the drain region, an interfacial oxide layer (IL) formed on the channel region into which at least one element disparate from Si, O, or N is incorporated at a peak concentration greater than 1×1019 atoms/cm2, and a high-k dielectric layer formed on the interfacial oxide layer having a high-k/IL interface at a depth substantially adjacent to the IL. In addition, at least one depth of peak density of the incorporated element(s) is located substantially below the high-k/IL interface. |
