| 摘要 |
A technique that enables the formation of a low resistivity barrier film at low temperatures, in which a catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas (such as H2, NH3 or SiH4) are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. Furthermore, a technique for removal of impurities (such as oxides, fluorides, carbides or nitrides), in which the catalyst is placed in a vacuum atmosphere and heated, and a treatment gas having a hydrogen atom in its chemical structure is brought into contact with the catalyst, thereby generating radicals. The surface of an object to be treated is exposed to these radicals. |
