PURPOSE: A nonvolatile memory device is provided to improve reliability by supplying power to a page buffer through a plurality of page buffer taping lines. CONSTITUTION: A memory cell array(110) includes the first bit line regions and common source taping regions which are alternatively arranged on a substrate along a specific direction. A page buffer(130) includes the second bit line regions arranged in the first bit line regions and page buffer taping regions arranged in the common source taping regions on the substrate. A plurality of bit lines are separated from each other and are extended from the first bit line regions to the second bit line regions.
