发明名称 |
METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE AND PHOTOMASK USED FOR THIS |
摘要 |
<p>PURPOSE: A method for manufacturing a non-volatile memory device and a photo-mask used for the same are provided to easily execute a follow-up process by uniformly controlling the width of a mask pattern. CONSTITUTION: A substrate(200) which includes a first area(A) and a second area(B) is provided. A lamination structure in which an interlayer dielectric layer(210) and a conductive layer(220) are alternately laminated on the substrate. A memory gate insulating layer(230) is placed between the lamination structure and a channel layer(240). A mask pattern covering the first area and a dummy mask pattern covering the second area are formed on the lamination structure. A slimming process for reducing the width of the mask pattern and the width of the dummy mask pattern is executed.</p> |
申请公布号 |
KR20120077031(A) |
申请公布日期 |
2012.07.10 |
申请号 |
KR20100138847 |
申请日期 |
2010.12.30 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK, YU JIN;OH, SANG HYUN |
分类号 |
H01L21/8247;H01L21/027;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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