发明名称 METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE AND PHOTOMASK USED FOR THIS
摘要 <p>PURPOSE: A method for manufacturing a non-volatile memory device and a photo-mask used for the same are provided to easily execute a follow-up process by uniformly controlling the width of a mask pattern. CONSTITUTION: A substrate(200) which includes a first area(A) and a second area(B) is provided. A lamination structure in which an interlayer dielectric layer(210) and a conductive layer(220) are alternately laminated on the substrate. A memory gate insulating layer(230) is placed between the lamination structure and a channel layer(240). A mask pattern covering the first area and a dummy mask pattern covering the second area are formed on the lamination structure. A slimming process for reducing the width of the mask pattern and the width of the dummy mask pattern is executed.</p>
申请公布号 KR20120077031(A) 申请公布日期 2012.07.10
申请号 KR20100138847 申请日期 2010.12.30
申请人 SK HYNIX INC. 发明人 PARK, YU JIN;OH, SANG HYUN
分类号 H01L21/8247;H01L21/027;H01L27/115 主分类号 H01L21/8247
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