发明名称 METHOD FOR RANDOM ACCESS MEMORY DEVICES TESTING
摘要 FIELD: information technology. ^ SUBSTANCE: method for RAM testing using P-digit pseudo-random number generator based on circular shift register with linear feedback and repetition cycle M. Generator structure is preliminary determined based on inequality system. The method consists in the process where not less than K cycles of testing are carried out in succession in each one of which following procedures are interleaved: procedure of writing test L-digit pseudo-random numbers to all N cells of RAM, and then procedure of reading recorded data from each RAM cell and comparing this data with test pseudo-random numbers. In this process, to generate test L-digit pseudo-random numbers at first new initial non-zero binary P-digit number L digits of which are later used as the first test number is written to pseudo-random number generator, then (N-1) cyclic shifts are carried out sequentially in the shift register with linear feedback and thus N L-digit test numbers are generated. Additionally, selection operation is introduced in which from successively generated pseudo-random numbers only those are selected as test numbers that are spaced apart accurately by L pseudo-random numbers. ^ EFFECT: providing equal and predicted effectiveness of detection of constant faults and faults due to informational interaction between memory cell in RAM with random structural arrangement. ^ 4 dwg
申请公布号 RU2455712(C2) 申请公布日期 2012.07.10
申请号 RU20090148253 申请日期 2009.12.24
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "VORONEZHSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" 发明人 PANJAVIN VLADIMIR VIKTOROVICH;PODVAL'NYJ SEMEN LEONIDOVICH;TJURIN SERGEJ VLADIMIROVICH
分类号 G11C29/20 主分类号 G11C29/20
代理机构 代理人
主权项
地址